Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 22 m • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 146 pF) • 100 Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible

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Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L

Features  Typical RDS(ON) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100% Avalanche Tested  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection)

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安森美半导体

丝印：BG025N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inv

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安森美半导体

丝印：BG028N170M1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET 28 m, 1700 V, M1, D2PAK-7L

Features • Typ. RDS(on) = 28 m • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ. Coss = 200 pF) • 100 Avalanche Tested • RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Converter

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安森美半导体

丝印：BG030N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：232.84 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection)

文件：468.1 Kbytes 页数：9 Pages

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安森美半导体

丝印：BG040N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(TOT) = 75 nC) • High Speed Switching with Low Capacitance (COSS = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection) Typical A

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：330.93 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：333.69 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

文件：333.69 Kbytes 页数：8 Pages

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安森美半导体