NTBG040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

NTC040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

NTHL040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •

NVBG040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve

NVHL040N120SC1_V01

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte