Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications •

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安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

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安森美半导体