Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650V, M3S, TOLL

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：589.22 Kbytes 页数：12 Pages

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丝印：TBL045065SC1；Package：H-PSOF8L；Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

文件：240.12 Kbytes 页数：8 Pages

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MOSFET - Power, Single N-Channel, SUPERFET, FAST, TOLL-4L 600 V, 48 m, 50 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The TOLL package offers improved thermal performance and excellent switching performance by providing a Kelvin Source configuration a

文件：371.37 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 44mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • High Speed Switching with Low Capacitance (Coss = 133 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Suppl

文件：451.77 Kbytes 页数：8 Pages

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安森美半导体

丝印：NTBL061N60S5H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TOLL-4L 600 V, 61 m, 41 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The TOLL package offers improved thermal performance and excellent switching performance by providing a Kelvin Source configuration and lower par

文件：251.19 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 56mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 56 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 59 nC) • Low Effective Output Capacitance (Coss = 109 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • S

文件：462.64 Kbytes 页数：8 Pages

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安森美半导体

丝印：NTBL080N60S5H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TOLL-4L 600 V, 80 m, 32 A

The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The TOLL package offers improved thermal performance and excellent switching performance by providing a Kelvin Source configuration and lower parasitic source

文件：251.26 Kbytes 页数：7 Pages

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安森美半导体

丝印：NTBL100N60S5H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TOLL-4L 600 V, 100 m, 27 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The TOLL package offers improved thermal performance and excellent switching performance by providing a Kelvin Source configuration and lower par

文件：249.38 Kbytes 页数：7 Pages

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安森美半导体

丝印：NTBL125N60S5H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TOLL-4L 600 V, 125 m, 22 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The TOLL package offers improved thermal performance and excellent switching performance by providing a Kelvin Source configuration and lower par

文件：249.96 Kbytes 页数：7 Pages

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安森美半导体

丝印：NTBL150N60S5H；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TOLL-4L 600 V, 150 m, 19 A

Description The SUPERFET V MOSFET FAST series helps maximize system efficiency by the extremely low switching losses in hard switching application. The TOLL package offers improved thermal performance and excellent switching performance by providing a Kelvin Source configuration and lower par

文件：260.8 Kbytes 页数：7 Pages

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安森美半导体