Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650V, M3S, TOLL

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：589.22 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TOLL

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.  • Max Junction Temperature 175°C\n• Leadless thin SMD package\n• Kelvin Source configuration\n• Excellent FOM [ = Rdson * Eoss ]\n• Ultra Low Gate Charge (QG(tot) = 55 nC)\n• Typ. RDS(on) = 32 mΩ at Vgs = 18V\n• High Speed Switching with Low Capacitance (Coss = 113 pF)\n• 15V to 18V Gate Drive\n• Ze;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：436.51 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Features • Typical RDS(ON) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

文件：470.52 Kbytes 页数：9 Pages

ONSEMI

安森美半导体