NTBL032N065M3S中文资料Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TOLL数据手册ONSEMI规格书

描述 Description

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

特性 Features

• Max Junction Temperature 175°C
• Leadless thin SMD package
• Kelvin Source configuration
• Excellent FOM [ = Rdson * Eoss ]
• Ultra Low Gate Charge (QG(tot) = 55 nC)
• Typ. RDS(on) = 32 mΩ at Vgs = 18V
• High Speed Switching with Low Capacitance (Coss = 113 pF)
• 15V to 18V Gate Drive
• Zero reverse recovery current of body diode
• 650V rated
• 100% UIL Tested
• RoHS Compliant
• Moisture Sensitivity Level 1 guarantee

应用 Application

• Telecommunication
• Cloud system
• Industrial