Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

文件：322.54 Kbytes 页数：8 Pages

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安森美半导体

SiC N-Channel MOSFET

FEATURES ·Low Effective Output Capacitance ·Ultra Low Gate Charge APPLICATIONS ·Main Inverters ·General Purpose Inverters ·DC/DC Converter ·UPS

文件：387.67 Kbytes 页数：3 Pages

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无锡固电

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

文件：322.54 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ. Coss = 79 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typic

文件：321.69 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

Features  Typ. RDS(on) = 960 m  Ultra Low Gate Charge (typ. QG(tot) = 14 nC)  Low Effective Output Capacitance (typ. Coss = 11 pF)  100 Avalanche Tested  RoHS Compliant Typical Applications  Solar Inverters  Electric Vehicle Charging Stations  Electric Storing Systems  SMPS (

文件：374.53 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：325.82 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：329.24 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：329.24 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：325.82 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650V, M3S, TOLL

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 152 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：583.3 Kbytes 页数：10 Pages

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安森美半导体