Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • These Devices are Pb−Free and are RoHS Compliant • NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change R

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安森美半导体

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

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安森美半导体

丝印：BG014N120M3P；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET ??14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100 Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies)

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安森美半导体

Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100 Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies)

文件：333.4 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100 Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies)

文件：333.4 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

文件：329.52 Kbytes 页数：8 Pages

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安森美半导体

丝印：BG015N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

文件：303.61 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

文件：303.61 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

文件：329.52 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • Low Effective Output Capacitance (Coss = 295 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second lev

文件：325.98 Kbytes 页数：8 Pages

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安森美半导体