丝印：BG014N120M3P；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET ??14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100 Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies)

文件：149.97 Kbytes 页数：6 Pages

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Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100 Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies)

文件：333.4 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100 Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supplies)

文件：333.4 Kbytes 页数：8 Pages

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安森美半导体

碳化硅（SiC）MOSFET – EliteSiC系列，14 mohm，1200V，M3P，D2PAK-7L封装

The new family of 1200V M3P planar SiC MOSFETs is optimized for power applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. • D2PAK-7L package for low common source inductance\n• Reduced EON losses\n• 15V to 18V Gate Drive\n• 18V for best performance; 15V for compatibility\n• New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses\n• Improved power density\n• 100% Avalanche Tested\n• Improved robustness to un;

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