Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

文件：303.61 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exem

文件：331.48 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

ON
TO-263-7

ON

上传：深圳市英特法电子科技有限公司

TDK
SMD

TDK

东电化

上传：北京天阳诚业科贸有限公司

Vishay(威世)
插件,P=2.54mm

Vishay(威世)

上传：深圳市双美芯科技有限公司