MOSFET - Power, Single N-Channel, TOLL 80 V, 0.79 m, 457 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC •

文件：277.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：319.33 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 m, 312 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D5N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 m, 312 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D7N10MC；Package：H-PSOF8L；MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 m, 272 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant

文件：272.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=187A@ TC=25℃ ·Drain Source Voltage- VDSS= 150V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Pow

文件：435.14 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOSFET -60 V, -18.5 A

MOSFET – Power, P-Channel, D2PAK -60 V, -18.5 A Features • Designed for Low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes • AEC Q101 Qualified − NTBV5605 • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • PWM Motor Control • Converters

文件：144.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET -60 V, -18.5 A

MOSFET – Power, P-Channel, D2PAK -60 V, -18.5 A Features • Designed for Low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes • AEC Q101 Qualified − NTBV5605 • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • PWM Motor Control • Converters

文件：144.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • These Devices are Pb−Free and are RoHS Compliant • NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change R

文件：176.99 Kbytes 页数：9 Pages

ONSEMI

安森美半导体