丝印：BG028N170M1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET 28 m, 1700 V, M1, D2PAK-7L

Features • Typ. RDS(on) = 28 m • Ultra Low Gate Charge (typ. QG(tot) = 222 nC) • Low Effective Output Capacitance (typ. Coss = 200 pF) • 100 Avalanche Tested • RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Converter

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ONSEMI

安森美半导体

碳化硅（SiC）MOSFET – EliteSiC系列，28 mohm，1700 V，M1，D2PAK-7L封装

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive. • D2PAK-7L package for low common source inductance\n• Reduced EON losses\n• 18V to 20V Gate Drive\n• 20V for best performance; 18V for compatibility\n• New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses\n• Improved power density\n• 100% Avalanche Tested\n• Improved robustness ;

ONSEMI

安森美半导体

DIP-2

RUILON瑞隆源

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SMD

TDK

东电化

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DIP

VISHAY/威世

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