丝印：BG030N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：232.84 Kbytes 页数：8 Pages

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安森美半导体

丝印：BG030N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

文件：233.32 Kbytes 页数：8 Pages

ONSEMI

安森美半导体