DMN32D0LV-13

Marking：BG2；Package：SOT563；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green

DMN32D0LV-7

Marking：BG2；Package：SOT563；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green

DMN32D0LVQ-13

Marking：BG2；Package：SOT563；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green

DMN32D0LVQ-7

Marking：BG2；Package：SOT563；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features DualN-ChannelMOSFET LowOn-Resistance VeryLowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green

SMAJ15CA

Marking：BG2；Package：SMA；400 W Transient Voltage Suppressor

1.Generaldescription 400Wuni-andbi-directionalTransientVoltageSuppressor(TVS)inaSMASurface-Mounted Device(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=400W •Reversestandoff