丝印：BG025N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 164 nC) • Low Output Capacitance (Coss = 278 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies) • Solar Inv

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