Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra−low saturation voltage, VCE(sat), and high current gain capability. These are designed for use in lower voltage, high speed switching applications where affordable efficient energy contr

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ONSEMI

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Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.05V(Max) @IC= 1A APPLICATIONS · Switching Regulators · Converters · DC−DC converters

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ISC

无锡固电

PNP Transistor

文件：135.02 Kbytes 页数：6 Pages

ONSEMI

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PNP Transistor

文件：77.3 Kbytes 页数：6 Pages

ONSEMI

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PNP Transistor

文件：135.02 Kbytes 页数：6 Pages

ONSEMI

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100 V, 3.0 A, Low VCE(sat) PNP Transistor

文件：72.7 Kbytes 页数：5 Pages

ONSEMI

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PNP Transistor

文件：135.02 Kbytes 页数：6 Pages

ONSEMI

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PNP Transistor

文件：77.3 Kbytes 页数：6 Pages

ONSEMI

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PNP Transistors

文件：930.01 Kbytes 页数：4 Pages

KEXIN

科信电子

100 V, 2.0 A, Low VCE(sat) PNP Transistor

文件：75.3 Kbytes 页数：5 Pages

ONSEMI

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