35 V, 5 A, Low VCE(sat) PNP Transistor

文件：65.44 Kbytes 页数：6 Pages

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安森美半导体

35 V, 5 A, Low VCE(sat) PNP Transistor

文件：120.66 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

35 V, 5 A, Low VCE(sat) PNP Transistor

文件：120.66 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

低饱和压晶体管，PNP，35 V，5.0 A

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable;

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安森美半导体

Package：SOT-23-6 细型，TSOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 35V 2A 6TSOP

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安森美半导体