30 V, 0.7 A, Low VCE(sat) PNP Transistor

文件：65.069 Kbytes 页数：4 Pages

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安森美半导体

30 V, 0.7 A, Low VCE(sat) PNP Transistor

文件：124.89 Kbytes 页数：4 Pages

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安森美半导体

30 V, 0.7 A, Low VCE(sat) PNP Transistor

文件：124.89 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

30 V, 0.7 A PNP Low VCE(sat) Bipolar Transistor

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta);

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安森美半导体

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 0.7A SC74

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安森美半导体