首页 >NP80N03KDE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
30VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@20A | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
30VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@20A | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SIPMOSPowerTransistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175°Coperatingtemperature | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
Enhancementmode Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175°Coperatingtemperature | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SIPMOSPowerTransistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175°Coperatingtemperature | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
Enhancementmode Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175°Coperatingtemperature | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
N-ChannelEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
N-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
N-ChEnhancementModePowerMOSFET | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF80N03combinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimize | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
30VN-CHANNELENHANCEMENTMODEMOSFET Application Batteryprotection Loadswitch Uninterruptiblepowersupply | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
30VN-CHANNELENHANCEMENTMODEMOSFET Application Batteryprotection Loadswitch Uninterruptiblepowersupply | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE |
详细参数
- 型号：
NP80N03KDE
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
35400 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
08+(pbfree) |
TO-263 |
8866 |
询价 | |||
NEC |
6000 |
面议 |
19 |
TO-263 |
询价 | ||
VB |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
2022+ |
TO-263 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
7500 |
国产品牌isc,可替代原装 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
NEC |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 |
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相关库存
更多- NP80N03KDE-E2-AY
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- NP80N06MLG
- NP80N06NLG
- NP80N06PLG
