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NP80N03KDE

MOS FIELD EFFECT TRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE

Product Scout Automotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE-E1-AY

MOS FIELD EFFECT TRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE-E2-AY

MOS FIELD EFFECT TRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

80N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

80N03J

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AP80N03GP-HF

FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP80N03GS-HF

FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

CJP80N03

N-ChannelPowerMOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

CJP80N03

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CJU80N03

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CJU80N03

N-ChannelPowerMOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

EMB80N03J

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS30V RDSON(MAX.)80mΩ ID2.5A Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FIR80N03LG

30VN-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

GE80N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GE80N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GI80N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

详细参数

  • 型号:

    NP80N03KDE

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供应商型号品牌批号封装库存备注价格
NEC
23+
TO-263
35400
全新原装真实库存含13点增值税票!
询价
NEC
08+(pbfree)
TO-263
8866
询价
23+
N/A
85900
正品授权货源可靠
询价
NEC
6000
面议
19
TO-263
询价
VB
21+
TO-263
10000
原装现货假一罚十
询价
NEC
2022+
TO-263
12888
原厂代理 终端免费提供样品
询价
NEC
23+
TO-263
6000
原装正品,支持实单
询价
isc
2024
D2PAK/TO-263
7500
国产品牌isc,可替代原装
询价
RENESAS/瑞萨
23+
TO-263
89630
当天发货全新原装现货
询价
NEC
22+
TO-263
25000
只做原装进口现货,专注配单
询价
更多NP80N03KDE供应商 更新时间2024-5-17 10:54:00