| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Germanium RF Transistor DESCRIPTION TheNESG340033isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Germanium RF Transistor DESCRIPTION TheNESG340033isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Germanium RF Transistor DESCRIPTION TheNESG340034isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=5V,IC=15mA,f=1GHz •Po(1dB)=24dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •Maxi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Germanium RF Transistor DESCRIPTION TheNESG340034isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=5V,IC=15mA,f=1GHz •Po(1dB)=24dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •Maxi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Germanium RF Transistor DESCRIPTION TheNESG3400M01isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN Silicon Germanium RF Transistor DESCRIPTION TheNESG3400M01isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
产品属性
- 产品编号：
NES
- 制造商：
Altech Corporation
- 类别：
电路保护 > 配件
- 包装：
散装
- 描述：
BUSBAR SUPP W FIXING SCREW(50
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NECT1K原装 |
SOT-343 |
3000 |
原装长期供货! |
询价 | |||
PHILLIPS |
24+ |
SMD |
7500 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
NEC |
25+ |
SM |
1200 |
原装现货热卖中,提供一站式真芯服务 |
询价 | ||
NEC |
17+ |
SOT-343 |
6200 |
100%原装正品现货 |
询价 | ||
NEC |
23+ |
原厂封装 |
9896 |
询价 | |||
RENESAS |
12+ |
SOT343 |
3000 |
询价 | |||
NEC |
24+ |
SOT343 |
6980 |
原装现货,可开13%税票 |
询价 | ||
MW |
23+ |
模块 |
1000 |
原装正品,假一罚十 |
询价 | ||
NECELECTRON |
24+ |
原封装 |
18514 |
原装现货假一罚十 |
询价 | ||
NICHIA |
13+ |
32325 |
原装分销 |
询价 |
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