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NESG3033M14

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3033M14-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3033M14-T3

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3033M14-T3-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG3033M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@VCE=2V,IC=15mA,f=2.0GHz •SiGeHBTtechnology(UHS3)adopted:fmax=110GHz •Thisproduct

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG340033

NPN Silicon Germanium RF Transistor

DESCRIPTION TheNESG340033isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG340033-T1B

NPN Silicon Germanium RF Transistor

DESCRIPTION TheNESG340033isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG340034

NPN Silicon Germanium RF Transistor

DESCRIPTION TheNESG340034isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=5V,IC=15mA,f=1GHz •Po(1dB)=24dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •Maxi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG340034-T1

NPN Silicon Germanium RF Transistor

DESCRIPTION TheNESG340034isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=5V,IC=15mA,f=1GHz •Po(1dB)=24dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=5V,IC(set)=40mA,f=1GHz •Maxi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3400M01

NPN Silicon Germanium RF Transistor

DESCRIPTION TheNESG3400M01isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3400M01-T1

NPN Silicon Germanium RF Transistor

DESCRIPTION TheNESG3400M01isanidealchoiceforlownoise,lowdistortionamplification. FEATURES •NF=0.65dBTYP.@VCE=3.3V,IC=15mA,f=1GHz •Po(1dB)=21dBmTYP.@VCE=3.3V,IC(set)=40mA,f=1GHz •OIP3=35.5dBmTYP.@VCE=3.3V,IC(set)=50mA,f=1GHz

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    NES

  • 制造商:

    Altech Corporation

  • 类别:

    电路保护 > 配件

  • 包装:

    散装

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

供应商型号品牌批号封装库存备注价格
NECT1K原装
SOT-343
3000
原装长期供货!
询价
PHILLIPS
24+
SMD
7500
绝对原装自家现货!真实库存!欢迎来电!
询价
NEC
25+
SM
1200
原装现货热卖中,提供一站式真芯服务
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
NEC
23+
原厂封装
9896
询价
RENESAS
12+
SOT343
3000
询价
NEC
24+
SOT343
6980
原装现货,可开13%税票
询价
MW
23+
模块
1000
原装正品,假一罚十
询价
NECELECTRON
24+
原封装
18514
原装现货假一罚十
询价
NICHIA
13+
32325
原装分销
询价
更多NES供应商 更新时间2025-7-24 16:20:00