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型号	下载订购	功能描述	制造商上传企业	LOGO
NESG340034	文件：214.07 Kbytes Page：11 Pages	NPN Silicon Germanium RF Transistor DESCRIPTION The NESG340034 is an ideal choice for low noise, low distortion amplification. FEATURES • NF = 0.65 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • Po (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maxi 文件：214.07 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG340034	文件：300 bytes Page：1 Pages	NPN Silicon Germanium RF Transistor	Renesas 瑞萨	Renesas
NESG340034-T1	文件：214.07 Kbytes Page：11 Pages	NPN Silicon Germanium RF Transistor DESCRIPTION The NESG340034 is an ideal choice for low noise, low distortion amplification. FEATURES • NF = 0.65 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • Po (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maxi 文件：214.07 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NESG340034-A	文件：137.58 Kbytes Page：2 Pages	RF & Microwave device 文件：137.58 Kbytes 页数：2 Pages	RENESAS 瑞萨	RENESAS

更多NESG340034供应商更新时间2026-1-30 11:06:00