DIN rail mountable type 30 ~ 240W

Features ● DIN rail standard mounting: EN50022-35x7.5 or 35x15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Safety:

文件：674.52 Kbytes 页数：3 Pages

LAMBDA

电盛兰达

DIN rail mountable type 30 ~ 240W

Features ● DIN rail standard mounting: EN50022-35x7.5 or 35x15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Safety:

文件：674.52 Kbytes 页数：3 Pages

LAMBDA

电盛兰达

DIN rail mountable

Features ● DIN rail standard mounting: EN50022-35 x 7.5 or 35 x 15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Saf

文件：259.89 Kbytes 页数：3 Pages

TDK

东电化

GaAs MES FET

30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FETDESCRIPTION The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linea

文件：175.85 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL GaAs MES FET

140 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1720P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, PDC and PHS base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high efficie

文件：182.8 Kbytes 页数：10 Pages

RENESAS

瑞萨

GaAs MES FET

30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased

文件：175.91 Kbytes 页数：10 Pages

RENESAS

瑞萨

30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device use

文件：46.19 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL GaAs MES FET

50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power (CW) with high linear gain, high efficienc

文件：226.54 Kbytes 页数：14 Pages

RENESAS

瑞萨

GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

文件：287.57 Kbytes 页数：13 Pages

RENESAS

瑞萨

GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

文件：287.57 Kbytes 页数：13 Pages

RENESAS

瑞萨