NES

包装：散装 类别：电路保护 配件 描述：BUSBAR SUPP W FIXING SCREW(50

NES120

DIN rail mountable type 30 ~ 240W

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Safety:

NES120-24

DIN rail mountable type 30 ~ 240W

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Safety:

NES120-24

DIN rail mountable

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Saf

NES1417B-30

GaAs MES FET

30WL-BANDPOWERGaAsFET N-CHANNELGaAsMESFETDESCRIPTION TheNES1417B-30ispowerGaAsFETwhichprovides highoutputpowerandhighgaininthe1.4-1.7GHz band. Internalinputmatchingcircuitsaredesignedto optimizeperformance.Thedevicehasa0.8mmgate lengthforincreasedlinea

NES1720P-140

N-CHANNEL GaAs MES FET

140WL-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1720P-140isa140Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplications forPCS,PDCandPHSbasestationsystems.Itiscapableofdelivering140Wofoutputpower(CW)withhighlinear gain,highefficie

NES1821B-30

30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION TheNES1821B-30ispowerGaAsFETwhichprovideshighoutputpowerandhighgaininthe1.8-2.1GHzband. Internalinputmatchingcircuitsaredesignedtooptimizeperformance.Thedevicehasa0.8mmgatelengthforincreasedlineargain.Toreducethermalresistance,thedeviceuse

NES1821B-30

GaAs MES FET

30WL-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNES1821B-30ispowerGaAsFETwhichprovides highoutputpowerandhighgaininthe1.8-2.1GHz band. Internalinputmatchingcircuitsaredesignedto optimizeperformance.Thedevicehasa0.8mmgate lengthforincreased

NES1821P-50

N-CHANNEL GaAs MES FET

50WL-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1821P-50isa50Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsfor PCS,DCSandPHSbasestationsystems.Itiscapableofdelivering50wattsofoutputpower(CW)withhighlinear gain,highefficienc

NES1823M-180

GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-180isa180Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering180Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

NES1823M-180-A

GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-180isa180Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering180Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

NES1823M-240

GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-240isa240Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering240Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

NES1823M-240-A

GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-240isa240Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering240Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

NES1823M-45

GaAs FET 45 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-45isa45Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000,PCS,andPDCbasestationsystems.Itiscapableofdelivering45Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdistortionunderthecondit

NES1823P-100

100W L-BAND PUSH-PULL POWER GaAs MESFET

DESCRIPTION TheNES1823P-100isa100Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforIMT-2000andPCS/PCNbasestationsystems.Itiscapableofdelivering100wattsofoutputpowerwithhighlineargain,highefficiencyandexcellentdistortion.Itsprimaryban

NES1823P-100

N-CHANNEL GaAs MESFET

100WL-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-100isa100Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsfor IMT-2000andPCS/PCNbasestationsystems.Itiscapableofdelivering100wattsofoutputpowerwithhighlinear gain,highefficie

NES1823P-140

140 W L, S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION TheNES1823P-140isa140Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCS,PHSandIMT2000basestationsystems.Itiscapableofdelivering140Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortionunderthe

NES1823P-140

N-CHANNEL GaAs MES FET

140WL,S-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-140isa140Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplications forPCS,DCS,PHSandIMT2000basestationsystems.Itiscapableofdelivering140Wofoutputpower(CW)with highlineargain,

NES1823P-30

30 W L-S BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION TheNES1823P-30isa30Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCSandIMT2000basestationsystems.Itiscapableofdelivering30wattsofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortion.Itsprimary

NES1823P-30

N-CHANNEL GaAs MES FET

30WL-SBANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-30isa30Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsfor PCS,DCSandIMT2000basestationsystems.Itiscapableofdelivering30wattsofoutputpower(CW)withhighlinear gain,high