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NES2527B-30

30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION TheNES2527B-30ispowerGaAsFETwhichprovideshighoutputpowerandhighgaininthe2.5-2.7GHzband. Internalinputmatchingcircuitsaredesignedtooptimizeperformance.Thedevicehasa0.8µmgatelengthforincreasedlineargain.Toreducethermalresistance,thedeviceu

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NES2527B-30

GaAs MES FET

30WS-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNES2527B-30ispowerGaAsFETwhich provideshighoutputpowerandhighgaininthe2.5-2.7 GHzband. Internalinputmatchingcircuitsaredesignedto optimizeperformance.Thedevicehasa0.8mmgate lengthforincreas

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES30-24

DIN rail mountable type 30 ~ 240W

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Safety:

LAMBDA

DENSEI-LAMBDA

NES30-24

DIN rail mountable

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Saf

TDKTDK Corporation

TDK株式会社东电化(中国)投资有限公司

NES60-24

DIN rail mountable type 30 ~ 240W

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Safety:

LAMBDA

DENSEI-LAMBDA

NES60-24

DIN rail mountable

Features ●DINrailstandardmounting:EN50022-35x7.5or35x15 ●Universalinput:85~265VACcontinuousinputvoltage ●Harmoniccorrection:IEC1000-3-2 ●Connectioncapacity:Solidorstandard/Conductorsizes0.2~2.5mm2/24~14AWG.Standard ●CEmarking:LowVoltageDirective ●Saf

TDKTDK Corporation

TDK株式会社东电化(中国)投资有限公司

NES71F

Compandor

FEATURES *Completecompressorandexpandorinone IChip *Temperaturecompensated *Greaterthan110dBdynamicrange *Operatesdownto6VDC *Systemlevelsadjustablewithexternal components *Distortionmaybetnmmedout *Dynamicnoisereductionsystems *Voltage-controlledamplifie

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

NES71N

Compandor

FEATURES *Completecompressorandexpandorinone IChip *Temperaturecompensated *Greaterthan110dBdynamicrange *Operatesdownto6VDC *Systemlevelsadjustablewithexternal components *Distortionmaybetnmmedout *Dynamicnoisereductionsystems *Voltage-controlledamplifie

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

NESG2021M05

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES •Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz •Maximumstablepowergain:MSG=22.5dBT

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2021M05-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES •Thisdeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.9dBTYP.,Ga=18.0dBTYP.@VCE=2V,IC=3mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=3mA,f=5.2GHz •Maximumstablepowergain:MSG=22.5dBT

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    NES

  • 制造商:

    Altech Corporation

  • 类别:

    电路保护 > 配件

  • 包装:

    散装

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

供应商型号品牌批号封装库存备注价格
NECT1K原装
SOT-343
3000
原装长期供货!
询价
PHILLIPS
24+
SMD
7500
绝对原装自家现货!真实库存!欢迎来电!
询价
NEC
25+
SM
1200
原装现货热卖中,提供一站式真芯服务
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
NEC
23+
原厂封装
9896
询价
RENESAS
12+
SOT343
3000
询价
NEC
24+
SOT343
6980
原装现货,可开13%税票
询价
MW
23+
模块
1000
原装正品,假一罚十
询价
NECELECTRON
24+
原封装
18514
原装现货假一罚十
询价
NICHIA
13+
32325
原装分销
询价
更多NES供应商 更新时间2025-5-22 15:47:00