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NESG204619-T1-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG204619-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2046M33

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG2046M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2046M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES •2differentbuilt-intransistors(NESG2046M33,2SC5800) Q1:HighgainSiGetransistor fT=18GHzTYP.,S21e2=13dBTYP.@VCE=1V,IC=15mA,f=2GHz Q2:Low

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2046M33-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG2046M33-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2046M33-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2046M33-T3-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG2046M33-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    NES

  • 制造商:

    Altech Corporation

  • 类别:

    电路保护 > 配件

  • 包装:

    散装

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

供应商型号品牌批号封装库存备注价格
NECT1K原装
SOT-343
3000
原装长期供货!
询价
PHILLIPS
24+
SMD
7500
绝对原装自家现货!真实库存!欢迎来电!
询价
NEC
25+
SM
1200
原装现货热卖中,提供一站式真芯服务
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
NEC
23+
原厂封装
9896
询价
RENESAS
12+
SOT343
3000
询价
NEC
24+
SOT343
6980
原装现货,可开13%税票
询价
MW
23+
模块
1000
原装正品,假一罚十
询价
NECELECTRON
24+
原封装
18514
原装现货假一罚十
询价
NICHIA
13+
32325
原装分销
询价
更多NES供应商 更新时间2025-5-28 16:19:00