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NESG2101M16-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2101M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG210719

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG210719

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG210719-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG210719-T1

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG210719-T1

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG210719-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2107M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES •2differentbuilt-intransistors(2SC5435,NESG2107M33) Q1:Highgaintransistor fT=12.0GHzTYP.,S21e2=11dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inl

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG2107M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES •2differentbuilt-intransistors(2SC5436,NESG2107M33) Q1:Highgaintransistor fT=12GHzTYP.,S21e2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Built-inlo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    NES

  • 制造商:

    Altech Corporation

  • 类别:

    电路保护 > 配件

  • 包装:

    散装

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

供应商型号品牌批号封装库存备注价格
NECT1K原装
SOT-343
3000
原装长期供货!
询价
PHILLIPS
24+
SMD
7500
绝对原装自家现货!真实库存!欢迎来电!
询价
NEC
25+
SM
1200
原装现货热卖中,提供一站式真芯服务
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
NEC
23+
原厂封装
9896
询价
RENESAS
12+
SOT343
3000
询价
NEC
24+
SOT343
6980
原装现货,可开13%税票
询价
MW
23+
模块
1000
原装正品,假一罚十
询价
NECELECTRON
24+
原封装
18514
原装现货假一罚十
询价
NICHIA
13+
32325
原装分销
询价
更多NES供应商 更新时间2025-5-18 10:20:00