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NESG2101M16-T3-A中文资料瑞萨数据手册PDF规格书
NESG2101M16-T3-A规格书详情
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain
amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2101M16-T3-A
- 功能描述：
射频硅锗晶体管 NPN High Frequency
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
9507 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
CEL |
2025+ |
SOT-523 |
7695 |
全新原厂原装产品、公司现货销售 |
询价 | ||
NEC |
0826+ |
6-PIN |
9507 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-523 |
50000 |
原装正品 支持实单 |
询价 | ||
CEL |
SOT-523 |
15000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
CEL |
20+ |
SOT-523 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
CEL |
16+ |
SOT-523 |
15000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | ||
NEC |
2450+ |
6-PIN |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
22+ |
SOT23-3 |
3000 |
原装正品,支持实单 |
询价 | ||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
询价 |
