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NESG2101M16中文资料PDF规格书
NESG2101M16规格书详情
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2101M16
- 功能描述：
射频硅锗晶体管 RO 551-NESG2101M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA/ |
9507 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NEC |
2020+ |
1208 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RENESAS/瑞萨 |
22+ |
1208 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-523 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NEC |
0826+ |
6-PIN |
9507 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NEC |
2022 |
6-PIN |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
NEC |
SMD |
39907 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
NEC |
22+ |
SOT23-3 |
3000 |
原装正品,支持实单 |
询价 | ||
NEC |
6-PIN |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
RENESAS-瑞萨 |
24+25+/26+27+ |
SOT-343 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
