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NESG2101M16中文资料瑞萨数据手册PDF规格书
NESG2101M16规格书详情
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2101M16
- 功能描述：
射频硅锗晶体管 RO 551-NESG2101M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2022+ |
6-PIN |
9507 |
原厂代理 终端免费提供样品 |
询价 | ||
NEC |
2023+ |
SMD |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS/瑞萨 |
24+ |
SOT-523 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
RENESAS |
23+ |
SOT-343 |
63000 |
原装正品现货 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-523 |
50000 |
原装正品 支持实单 |
询价 | ||
CEL |
2025+ |
SOT-523 |
7695 |
全新原厂原装产品、公司现货销售 |
询价 | ||
NEC |
24+ |
1208 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
NEC |
23+ |
SOT-343 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NEC |
23+ |
6-PIN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
20+ |
SMD |
19507 |
进口原装现货,假一赔十 |
询价 |
