NESG2030M04

NONLINEAR MODEL

DESCRIPTION TheNESG2030M04isfabricatedusingNECsstate-of-the-artSiGe,waferprocess.Withatypicaltransitionfrequencyof60GHztheNESG2030M04isusableinapplicationsfrom100MHztoover10GHz.MaximumDCcurrentinputof35mAprovidesadevicewithausablecurrentrangeof250µA

NESG2031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency

NESG2031M05

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY

NESG2031M05-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY

NESG2031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency

NESG2031M05-T1

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY

NESG2031M05-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY

NESG2031M16

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NESG2031M16

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

NESG2031M16-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.