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NESG2031M16-A中文资料瑞萨数据手册PDF规格书
NESG2031M16-A规格书详情
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2031M16-A
- 功能描述：
射频硅锗晶体管 NPN High Frequency
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
2022+ |
SOT-523 |
20000 |
只做原装进口现货.假一罚十 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-563 |
50000 |
原装正品 支持实单 |
询价 | ||
RENESAS/瑞萨 |
24+ |
SOT-563 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
NEC |
24+ |
SOT343 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
NEC |
23+ |
SOT563 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
RENESAS |
19+ |
SOT343 |
87069 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
CEL |
20+ |
SOT-523 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NEC |
23+ |
SOT563 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
NEC |
23+ |
SOT343 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
20+ |
SOT563 |
10000 |
进口原装现货,假一赔十 |
询价 |
