NES1823P-45

45 W L, S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION TheNES1823P-45isa45Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCS,PHSandIMT2000basestationsystems.Itiscapableofdelivering45Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortionundertheco

NES1823P-45

N-CHANNEL GaAs MES FET

45WL,S-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-45isa45Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCS,PHSandIMT2000basestationsystems.Itiscapableofdelivering45Wofoutputpower(CW)withhighlineargain,highe

NES1823P-50

50 W L-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION TheNES1823P-50isa50Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCS,PHS,andIMT2000basestationsystems.Itiscapableofdelivering50Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortion.Itsprimar

NES1823P-50

N-CHANNEL GaAs MES FET

50WL-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-50isa50Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCS,PHS,andIMT2000basestationsystems.Itiscapableofdelivering50Wofoutputpower(CW)withhighlineargain,higheff

NES1823P-70

N-CHANNEL GaAs MES FET

70WL,S-BANDPUSH-PULLPOWERGaAsMESFET FEATURES •Push-pulltypeN-channelGaAsMESFET •VDS=12.0Voperation •Highoutputpower:Pout=70WTYP. •Highlineargain:GL=11.0dBTYP. •Highpoweraddedefficiency:hadd=40TYP.@VDS=12.0V,IDset=5.0A(total),f=2.20GH

NES1823S-45

GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION TheNES1823S-45isa45Wsingle-endtypeGaAsFETdesignedforhighpowertransmitterapplicationsforWCDMA (IMT-2000)basestationsystems.Itoperatesat12Vandiscapableofdelivering45Wofoutputpower(CW) withhighlineargain,highefficiencyandlowdistortion.Itspr

NES1823S-45-A

GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION TheNES1823S-45isa45Wsingle-endtypeGaAsFETdesignedforhighpowertransmitterapplicationsforWCDMA (IMT-2000)basestationsystems.Itoperatesat12Vandiscapableofdelivering45Wofoutputpower(CW) withhighlineargain,highefficiencyandlowdistortion.Itspr

NES1823S-90

GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION TheNES1823S-90isa90Wsingle-endtypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itiscapableofdelivering90Wofoutputpower(CW)withhighlineargain,highefficiency andexcellentdistortionundertheconditionof12.0V

NES-1K8T210BC

1800W 3 channels Programmable IP66 Driver

Features Non-IsolatedClassIdriver NoAfterglow Dim-to-OffwithStandbyPower≤0.5W@230Vac DimmingRange:0.4%-100% 3*600WIndependentProgrammableChannels&Support CommonAnodeOutputConnection MaxRemoteDistanceUpto300Meters UltraHighEfficiency(Upto97%) Ful

NES-1K8TXXXBC

1800W 3 channels Programmable IP66 Driver

Features Non-IsolatedClassIdriver NoAfterglow Dim-to-OffwithStandbyPower≤0.5W@230Vac DimmingRange:0.4%-100% 3*600WIndependentProgrammableChannels&Support CommonAnodeOutputConnection MaxRemoteDistanceUpto300Meters UltraHighEfficiency(Upto97%) Ful