DESCRIPTION

The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA

(IMT-2000) base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW)

with high linear gain, high efficiency and low distortion. Its primary band is 1.8 to 2.3 GHz. The device employs 0.9 μm

Tungsten Silicide gates, via holes, plated heatsink, and silicon dioxide passivation for superior performance, thermal

characteristics, and reliability.

FEATURES

• Single-end type GaAs FET

• VDS = 12 V operation

• High output power: Pout = 45 W TYP.

• High linear gain : GL = 13.5 dB TYP.

• High power added efficiency: ηadd = 53 TYP. @ VDS = 12 V, IDset = 1 A, f = 2.17 GHz

• Hollow plastic package