NES1823M-180-A中文资料瑞萨数据手册PDF规格书

厂商型号	NES1823M-180-A
功能描述	GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET
文件大小	287.57 Kbytes
页面数量	13 页
生产厂商	RENESAS
中文名称	瑞萨
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-14 8:24:00
人工找货	NES1823M-180-A价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT-

2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high

linear gain, high efficiency and low distortion. Its primary band is 1.8 to 2.3 GHz. The device employs 0.7 μm

Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal

characteristics, and reliability.

FEATURES

• Push-pull type GaAs FET

• VDS = 12.0 V operation

• High output power: Pout = 180 W TYP.

• High linear gain: GL = 12.5 dB TYP.

• High power added efficiency: ηadd = 48 TYP. @ VDS = 12.0 V, IDset = 2.0 A (total), f = 2.17 GHz

• Hollow plastic package