NES1821B-30中文资料瑞萨数据手册PDF规格书

30W L-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NES1821B-30 is power GaAs FET which provides

high output power and high gain in the 1.8-2.1 GHz

band.

Internal input matching circuits are designed to

optimize performance. The device has a 0.8 mm gate

length for increased linear gain. To reduce thermal

resistance, the device uses PHS (Plated Heat Sink)

technology.

The device incorporates WSi (tungsten silicide) gate

for high reliability and SiO2 glassivation for

surface stability.

FEATURES

· High output power

· High gain

· High power added efficiency

· Internally matched input

· High reliability