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NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M05-T1-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M14

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M14-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M14-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3031M14-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3032M14

NPN SiGe RF Transistor for Low Noise, High-Gain

NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3032M14-A

NPN SiGe RF Transistor for Low Noise, High-Gain

NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3032M14-T3

NPN SiGe RF Transistor for Low Noise, High-Gain

NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NESG3032M14-T3-A

NPN SiGe RF Transistor for Low Noise, High-Gain

NPNSiGeRFTransistorforLowNoise,High-Gain Amplification4-PinLead-LessMinimold(M14,1208PKG) FEATURES •TheNESG3032M14isanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.@VCE=2V,IC=6mA,f=2.0GHz •Maximumstablepowergain:MSG=20.5dBTYP.@

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    NES

  • 制造商:

    Altech Corporation

  • 类别:

    电路保护 > 配件

  • 包装:

    散装

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

供应商型号品牌批号封装库存备注价格
NECT1K原装
SOT-343
3000
原装长期供货!
询价
PHILLIPS
24+
SMD
7500
绝对原装自家现货!真实库存!欢迎来电!
询价
NEC
25+
SM
1200
原装现货热卖中,提供一站式真芯服务
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
NEC
23+
原厂封装
9896
询价
RENESAS
12+
SOT343
3000
询价
NEC
24+
SOT343
6980
原装现货,可开13%税票
询价
MW
23+
模块
1000
原装正品,假一罚十
询价
NECELECTRON
24+
原封装
18514
原装现货假一罚十
询价
NICHIA
13+
32325
原装分销
询价
更多NES供应商 更新时间2025-5-28 11:05:00