NESG340033资料datasheet下载供应价格瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NESG340033	文件：224.8 Kbytes Page：12 Pages	NPN Silicon Germanium RF Transistor DESCRIPTION The NESG340033 is an ideal choice for low noise, low distortion amplification. FEATURES • NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz • Po (1 dB) = 21 dBm TYP. @ VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz 文件：224.8 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NESG340033	文件：300 bytes Page：1 Pages	NPN Silicon Germanium RF Transistor	Renesas 瑞萨	Renesas
NESG340033-T1B	文件：224.8 Kbytes Page：12 Pages	NPN Silicon Germanium RF Transistor DESCRIPTION The NESG340033 is an ideal choice for low noise, low distortion amplification. FEATURES • NF = 0.65 dB TYP. @ VCE = 3.3 V, IC = 15 mA, f = 1 GHz • Po (1 dB) = 21 dBm TYP. @ VCE = 3.3 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 3.3 V, IC (set) = 50 mA, f = 1 GHz 文件：224.8 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NET2272REV1A-LF	文件：0 bytes Page：0 Pages		AVAGO 安华高上传：深圳市云中傲科技有限公司	AVAGO

更多NESG340033供应商更新时间2026-1-27 9:02:00