HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：269.44 Kbytes 页数：8 Pages

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HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：223.26 Kbytes 页数：11 Pages

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瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：223.26 Kbytes 页数：11 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：269.44 Kbytes 页数：8 Pages

CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：269.44 Kbytes 页数：8 Pages

CEL

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：223.26 Kbytes 页数：11 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：223.26 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：A；Package：84C；HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic (84C) package APPLICATIONS • 20 GHz-band DBS LNB • Other K-band communication systems

文件：223.26 Kbytes 页数：11 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Package：微型-X 陶瓷 84C；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 4V 20GHZ MICRO-X

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