HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure & associated gain: NF = 0.75 TYP., Ga = 12 dB TYP. @ f = 12 GHz NF = 0.4 TYP., Ga = 16 dB TYP. @ f = 4 GHz • 6-pin super minimold package • Gate width: Wg = 160 mm

文件：206.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：V74；HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Super low noise figure & associated gain: NF = 0.75 TYP., Ga = 12 dB TYP. @ f = 12 GHz NF = 0.4 TYP., Ga = 16 dB TYP. @ f = 4 GHz • 6-pin super minimold package • Gate width: Wg = 160 mm

文件：206.81 Kbytes 页数：10 Pages

RENESAS

瑞萨

SOT89

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOP/DIP

TI

德州仪器

上传：深圳市勤思达科技有限公司

SOP/DIP

TI/ST

上传：深圳市美思瑞电子科技有限公司