C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super low noise figure & High associated gain

文件：50.82 Kbytes 页数：12 Pages

NEC

瑞萨

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NECs stringent quali

文件：58.47 Kbytes 页数：6 Pages

CEL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

CEL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NECs stringent quali

文件：58.47 Kbytes 页数：6 Pages

CEL

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super low noise figure & High associated gain

文件：50.82 Kbytes 页数：12 Pages

NEC

瑞萨