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NE46134

NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION NECs NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers

文件:137.62 Kbytes 页数:10 Pages

NEC

瑞萨

NE46134

NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers e

文件:284.75 Kbytes 页数:11 Pages

CEL

NE46134-T1

NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION NECs NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers

文件:137.62 Kbytes 页数:10 Pages

NEC

瑞萨

NE46134-T1-AZ

NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR

DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers e

文件:284.75 Kbytes 页数:11 Pages

CEL

NE46134-T1

Package:TO-243AA;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V 5.5GHZ SOT89

CEL

NE46134-T1-AZ

Package:TO-243AA;包装:卷带(TR)剪切带(CT) 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V 5.5GHZ SOT89

CEL

NE46134-T1-QR-AZ

Package:TO-243AA;包装:带 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V 5.5GHZ SOT89

CEL

详细参数

  • 型号:

    NE46134

  • 功能描述:

    射频双极电源晶体管 NPN Med Pwr Hi-Freq

  • RoHS:

  • 制造商:

    M/A-COM Technology Solutions

  • 配置:

    Single 直流集电极/Base Gain hfe

  • Min:

    40

  • 最大工作频率:

    30 MHz 集电极—发射极最大电压

  • VCEO:

    25 V 发射极 - 基极电压

  • VEBO:

    4 V

  • 集电极连续电流:

    20 A

  • 功率耗散:

    250 W

  • 封装/箱体:

    Case 211-11

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
20+
SOT-89
120000
原装正品 可含税交易
询价
NEC
22+
SOT89
3000
原装正品,支持实单
询价
RENESAS
23+
SOT89
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
RENESAS
23+
SOT89
172
全新原装正品现货,支持订货
询价
RENESAS
20+
SOT89
172
进口原装现货,假一赔十
询价
RENESAS
25+
SOT89
8800
公司只做原装,详情请咨询
询价
RENESAS
24+
SOT89
16900
原装正品现货支持实单
询价
RENESAS
2511
SOT89
172
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
RENESAS
22+
SOT89
20000
公司只做原装 品质保障
询价
NEC
24+
SOT-89
7500
询价
更多NE46134供应商 更新时间2025-12-23 14:00:00