C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • Super low noise figure & High associated gain

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NEC

瑞萨

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for second and third stage low noise amplifiers in DBS, TVRO and other commercial systems. NECs stringent quali

文件：58.47 Kbytes 页数：6 Pages

CEL

RENESAS
SOT89

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TI
SOP/DIP

TI

德州仪器

上传：深圳市勤思达科技有限公司

TI/ST
SOP/DIP

TI/ST

上传：深圳市美思瑞电子科技有限公司