L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

文件：63.89 Kbytes 页数：12 Pages

NEC

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GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

文件：203.75 Kbytes 页数：14 Pages

RENESAS

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L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：41.67 Kbytes 页数：7 Pages

NEC

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L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

Renesas

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丝印：V41；GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

文件：203.75 Kbytes 页数：14 Pages

RENESAS

瑞萨

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

文件：63.89 Kbytes 页数：12 Pages

NEC

瑞萨

L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：41.67 Kbytes 页数：7 Pages

NEC

瑞萨

L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

文件：41.67 Kbytes 页数：7 Pages

NEC

瑞萨