首页 >NE5511279A>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

NE5511279A

SILICON POWER MOS FET

7.5VOPERATIONSILICONRFPOWERLD-MOSFET FORUHF-BAND10WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE5511279A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NE5511279A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

CEL

California Eastern Labs

NE5511279A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

CEL

California Eastern Labs

NE5511279A-T1

Marking:W3;Package:79A;SILICON POWER MOS FET

7.5VOPERATIONSILICONRFPOWERLD-MOSFET FORUHF-BAND10WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE5511279A-T1A

Marking:W3;Package:79A;SILICON POWER MOS FET

7.5VOPERATIONSILICONRFPOWERLD-MOSFET FORUHF-BAND10WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NE5511279A-A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

CEL

California Eastern Labs

NE5511279A-T1

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NE5511279A-T1A

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NE5511279A-T1-A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

CEL

California Eastern Labs

详细参数

  • 型号:

    NE5511279A

  • 功能描述:

    射频MOSFET电源晶体管 RO 551-NE5511279A-A

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
NEC
23+
TO-59
8510
原装正品代理渠道价格优势
询价
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
24+
3000
公司存货
询价
NEC
24+
79A
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
RENESAS
24+
PW-X79A
5000
全现原装公司现货
询价
NEC
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
RENESAS/瑞萨
1002+
PW-X79A
12439
只做原厂原装,认准宝芯创配单专家
询价
RENESAS/瑞萨
1902+
PW-X79A
2734
代理品牌
询价
CALIFORNIAE
6000
面议
19
DIP/SMD
询价
CEL
20+
原装
65790
原装优势主营型号-可开原型号增税票
询价
更多NE5511279A供应商 更新时间2025-7-22 16:01:00