AD-BZT52C3V3S

Marking：W3；Package：SOD-323；Plastic-Encapsulated Diode

FEATURES ⚫Planardieconstruction ⚫200mWpowerdissipationonceramicPBC ⚫Generalpurpose,mediumcurrent ⚫AEC-Q101qualified

BALFHB-WL-03D3

Marking：W3；Package：CSPG；50 Ω nominal input / conjugate matched balun to QFN-2L STM32WL in high power mode, 862-928 MHz with integrated harmonic filter

Features •QFNSTM32WLsub-GHzwirelessmicrocontrollersimpedancematchedbalun andTxharmonicsfilter •OptimizedforQFNSTM32WLsub-GHzwirelessmicrocontrollersinhigh powermodeanddedicatedto2-layerPCB •50Ωnominalinput/conjugatematchedbaluntoQFNSTM32WL •50Ωnominal

BD45472G

Marking：W3；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46471

Marking：W3；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46471G

Marking：W3；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-incoun

BZT52B3V0

Marking：W3；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.4V–51VNominalZenerVoltage 2%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52B3V0S

Marking：W3；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–75VNominalZenerVoltage 2%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52-C3

Marking：W3；Package：SOD-123；SURFACE MOUNT SILICON ZENER DIODES

FEATURES •PlanarDieconstruction •410mWPowerDissipation •ZenerVoltagesfrom2.4~75V •IdeallySuitedforAutomatedAssemblyProcesses •IncompliancewithEURoHS2002/95/ECdirectives

BZT52C3V0

Marking：W3；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52C3V3

Marking：W3；Package：SOD-123；SURFACE MOUNT ZENER DIODES

FEATURES： PlanarDieConstruction 500mWPowerDissipationonCeramicPCB GeneralPurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses AvailableinLeadFreeVersion