NE5520279A-T1资料使用说明书批发采购瑞萨-114ic电子网

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NE5520279A-T1	文件：290.22 Kbytes Page：11 Pages	SILICON POWER MOS FET 3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE5520279A-T1	文件：166.31 Kbytes Page：7 Pages	NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
NE5520279A-T1A	文件：290.22 Kbytes Page：11 Pages	SILICON POWER MOS FET 3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NE5520279A-T1-A	文件：351.15 Kbytes Page：8 Pages	3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage	CEL California Eastern Laboratories	CEL

更多NE5520279A-T1供应商更新时间2024-4-30 17:31:00