丝印：V41；Package：SOT765-1；Dual buffer/line driver; 3-state

1. General description The 74LVC2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE: • A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. • A LOW level at pin 2OE causes ou

文件：274.15 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V41；Package：SOT505-2；Dual buffer/line driver; 3-state

1. General description The 74LVC2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE: • A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. • A LOW level at pin 2OE causes ou

文件：274.15 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V41；Package：SOT833-1；Dual buffer/line driver; 3-state

1. General description The 74LVC2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE: • A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. • A LOW level at pin 2OE causes ou

文件：274.15 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V41；GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

文件：203.75 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：V41；Package：VSSOP8；Dual buffer/line driver; 3-state

文件：228.23 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：V4148；Package：DO-35；Small Signal Fast Switching Diodes

文件：86.4 Kbytes 页数：2 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：147.57 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

HIG VOLTAGE, PHOTO MOS RELAY

文件：490.63 Kbytes 页数：3 Pages

COSMO

冠西电子

Small Signal Fast Switching Diodes

FEATURES • Silicon epitaxial planar diode • Electrically equivalent diodes: 1N4148 - 1N914 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

文件：84.25 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

HIG VOLTAGE, PHOTO MOS RELAY

文件：490.63 Kbytes 页数：3 Pages

COSMO

冠西电子