丝印：V4t；Package：SOT23；2-Line Bi-directional TVS Diode

Features ● Ultra low leakage: nA level ● Operating voltage: 5V ● Low clamping voltage ● Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV - IEC61000-4-4 (EFT) 40A (5/50ns) -IEC61000-4-5 (Lightning) 10A (8/20μs) ● RoH

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丝印：V4T；Package：SOT-23；350W peak pulse power (tp=8/20μs)

Features 350W peak pulse power (tp=8/20μs) Bidirectional configurations Solid-state silicon-avalanche technology Low clamping voltage Low leakage current IEC 61000-4-2 ±30kV contact ±30kV air IEC 61000-4-4 (EFT) 40A(5/50ns) IEC 61000-4-5(Lightning) 17A(8/20μs) Applications Dataline Auto

文件：303.79 Kbytes 页数：3 Pages

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友台半导体

丝印：V4T；Package：SOT-23；2-Line Bi-directional TVS Diode

Features 60W peak pulse power(8/20μs) Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: 130kV - IEC61000-4-4 (EFT) 40A (5/50ns) -IEC61000-4-5 RoHS Complia

文件：1.28981 Mbytes 页数：4 Pages

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丝印：V4T125；Package：US14；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad Bus Buffer, Non-Inverted 3-State Outputs with Level Shifting General 74LV4T125 is high speed CMOS quad 3-state bus buffer gate fabricated with silicon gate CMOS technology. This product is able to allow level-up or level-down voltage translation with only one po

文件：240.88 Kbytes 页数：13 Pages

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东芝

丝印：V4T126；Package：US14；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad Bus Buffer, Non-Inverted 3-State Outputs with Level Shifting General 74LV4T126 is high speed CMOS quad 3-state bus buffer gate fabricated with silicon gate CMOS technology. This product is able to allow level-up or level-down voltage translation with only one po

文件：240.34 Kbytes 页数：13 Pages

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东芝