PESD5V0L2BT

Marking：V4t；Package：SOT23；2-Line Bi-directional TVS Diode

Features ●Ultralowleakage:nAlevel ●Operatingvoltage:5V ●Lowclampingvoltage ●Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(Lightning)10A(8/20μs) ●RoH

PESD5V0L2BT

Marking：V4T；Package：SOT-23；350W peak pulse power (tp=8/20μs)

Features 350Wpeakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)17A(8/20μs) Applications Dataline Auto

SMC05

Marking：V4T；Package：SOT-23；2-Line Bi-directional TVS Diode

Features 60Wpeakpulsepower(8/20μs) Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contact discharge:130kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5 RoHSComplia

74LV4T125FK

Marking：V4T125；Package：US14；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •QuadBusBuffer,Non-Inverted3-StateOutputswithLevelShifting General 74LV4T125ishighspeedCMOSquad3-statebusbuffergatefabricatedwithsilicongateCMOStechnology. Thisproductisabletoallowlevel-uporlevel-downvoltagetranslationwithonlyonepo

74LV4T126FK

Marking：V4T126；Package：US14；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •QuadBusBuffer,Non-Inverted3-StateOutputswithLevelShifting General 74LV4T126ishighspeedCMOSquad3-statebusbuffergatefabricatedwithsilicongateCMOStechnology. Thisproductisabletoallowlevel-uporlevel-downvoltagetranslationwithonlyonepo