PESD12VL2BT

Marking：V5T；Package：SOT-23；Solid-state silicon-avalanche technology

Features 350Wpeakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)12A(8/20μs) Applications Dataline

SDT23C12L02

Marking：V5T；Package：SOT23；2-Line Bl-directional TVS Diode

Features 80Wpeakpulsepower(8/20μs) •Ultralowleakage:nAlevel •Operatingvoltage:12V •Lowclampingvoltage •Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:130kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(Lig

SMC12

Marking：V5T；Package：SOT23；2-Line Bl-directional TVS Diode

Features •80Wpeakpulsepower(8/20μs) •Ultralowleakage:nAlevel •Operatingvoltage:12V •Lowclampingvoltage •Complieswithfollowingstandards: -IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV -IEC61000-4-4(EFT)40A(5/50ns) -IEC61000-4-5(L