丝印：V5T；Package：SOT-23；Solid-state silicon-avalanche technology

Features 350W peak pulse power (tp =8/20μs) Bidirectional configurations Solid-state silicon-avalanche technology Low clamping voltage Low leakage current IEC 61000-4-2 ±30kV contact ±30kV air IEC 61000-4-4 (EFT) 40A(5/50ns) IEC 61000-4-5 (Lightning) 12A(8/20μs) Applications Dataline

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UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：V5T；Package：SOT23；2-Line Bl-directional TVS Diode

Features 80W peak pulse power(8/20 μs) • Ultra low leakage: nA level • Operating voltage: 12V • Low clamping voltage • Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: 130kV - IEC61000-4-4 (EFT) 40A (5/50ns) -IEC61000-4-5 (Lig

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丝印：V5T；Package：SOT23；2-Line Bl-directional TVS Diode

Features • 80W peak pulse power(8/20 μs) • Ultra low leakage: nA level • Operating voltage: 12V • Low clamping voltage • Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV - IEC61000-4-4 (EFT) 40A (5/50ns) -IEC61000-4-5 (L

文件：2.02283 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子