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NE461M02

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NECs titanium, platinum, gold metallization

文件:45.91 Kbytes 页数:5 Pages

NEC

瑞萨

NE461M02

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

Renesas

瑞萨

NE461M02-T1

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NECs titanium, platinum, gold metallization

文件:45.91 Kbytes 页数:5 Pages

NEC

瑞萨

NE461M02-T1-AZ

Package:TO-243AA;包装:托盘 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V SOT89

CEL

NE461M02-T1-QR-AZ

Package:TO-243AA;包装:带 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V

CEL

NE461M02-T1-QS-AZ

Package:TO-243AA;包装:带 类别:分立半导体产品 晶体管 - 双极(BJT)- 射频 描述:RF TRANS NPN 15V SOT89

CEL

详细参数

  • 型号:

    NE461M02

  • 功能描述:

    射频MOSFET电源晶体管

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
NEC
25+
SOT-89
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
NEC
22+
SOT89
3000
原装正品,支持实单
询价
NEC
24+
SOT-89
53
询价
CEL
24+
原厂原装
4000
原装正品
询价
NEC
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
NEC
24+
SOT-89
9600
原装现货,优势供应,支持实单!
询价
RENESAS/瑞萨
23+
SOT89
50000
全新原装正品现货,支持订货
询价
NEC
23+
SOT89
26000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
22+
SOT-89
100000
代理渠道/只做原装/可含税
询价
California Eastern Labs
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多NE461M02供应商 更新时间2025-12-8 14:52:00