C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3

文件：77.49 Kbytes 页数：12 Pages

NEC

瑞萨

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE:

文件：42.13 Kbytes 页数：5 Pages

CEL

C BAND SUPER LOW NOISE HJ FET

文件：41.16 Kbytes 页数：5 Pages

NEC

瑞萨

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Renesas

瑞萨

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE:

文件：42.13 Kbytes 页数：5 Pages

CEL

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3

文件：77.49 Kbytes 页数：12 Pages

NEC

瑞萨

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.3

文件：77.49 Kbytes 页数：12 Pages

NEC

瑞萨

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. FEATURES • VERY LOW NOISE FIGURE:

文件：42.13 Kbytes 页数：5 Pages

CEL

C BAND SUPER LOW NOISE HJ FET

文件：41.16 Kbytes 页数：5 Pages

NEC

瑞萨

C BAND SUPER LOW NOISE HJ FET

文件：41.16 Kbytes 页数：5 Pages

NEC

瑞萨