NE434S01中文资料CEL数据手册PDF规格书
NE434S01规格书详情
DESCRIPTION
The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.
FEATURES
• VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz
• HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz
• GATE WIDTH: 280 µm
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
产品属性
- 型号：
NE434S01
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
3585 |
原装现货,当天可交货,原型号开票 |
询价 | ||
NEC |
24+ |
SMT76 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NEC |
2005 |
SO86 |
335 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
PHI |
23+ |
SO-8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
恩XP |
23+ |
SOP-8 |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
PHI |
00+ |
SMD8 |
386 |
全新原装100真实现货供应 |
询价 | ||
NEC |
22+ |
MICRO-X |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
PHI |
SOP-8L |
6000 |
绝对原装自己现货 |
询价 | |||
PHI |
23+ |
SO-8 |
12300 |
询价 |
